Method for forming a semiconductor device

Details Method for forming a semiconductor device Method for forming a semiconductor device

2006-06-20

2006-06-20

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S267000, C438S585000

Reexamination Certificate

active

07064031

ABSTRACT:
A method for forming a semiconductor device by self-aligned is provided. The present method provides a substrate and a multilayer structure is formed thereon. A patterned first layer is formed on the multilayer structure, and a second layer is then formed on the patterned first layer and the multilayer structure. An etching step is performed to partially etch the second layer. A third layer is formed and then is partially removed. Another etching step etches the patterned first layer. The multilayer structure is etched to expose the substrate. The third layer is also etched. A gate layer is formed on the semiconductor device, wherein a plurality of implanted regions are formed inside the substrate not covered by the multilayer structure.

REFERENCES:
patent: 6642573 (2003-11-01), Halliyal et al.
patent: 6706595 (2004-03-01), Yang et al.
patent: 6709921 (2004-03-01), Yeh et al.
patent: 6709928 (2004-03-01), Jenne et al.
patent: 2005/0189582 (2005-09-01), Mikolajick

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