Method for forming a semiconductor device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C043S037000, C043S034000

Reexamination Certificate

active

06780703

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates generally to semiconductor manufacturing and more particularly to a method for thinning a semiconductor substrate.
BACKGROUND OF THE INVENTION
Semiconductor devices made from gallium arsenide (GaAs) substrates are capable of increased performance over those made from silicon substrates. GaAs has a larger low-field electron mobility and a lower saturation field than silicon; and GaAs can be made semi-insulating, which reduces parasitic capacitance. All of which mean an increase in speed as compared to silicon.
However, compared to silicon, Gallium arsenide is a poor thermal conductor. This limits the number of integrated circuits that can be fabricated on a given area of semiconductor material and limits the power capability of the semiconductor device. To improve thermal conductivity, GaAs device substrates are typically thinned. This involves mechanically grinding away bottom portions of the gallium arsenide substrate after forming the semiconductor device. The grinding process can cause problems with substrate breakage, and the performance variations associated with grinding result in considerable within-wafer and wafer-to-wafer thickness variations. Conventional grinding processes can thin GaAs substrates to target thicknesses of approximately 25 microns and are capable of achieving uniformities of +/−13 microns across the wafer (i.e., for a substrate having a target thickness of 25 microns after grinding, the thickness across the substrate can range from approximately 12-38 microns). Additional thinning of the wafer substrate to accommodate increased thermal conductivity and power requirements will ultimately require wafer thinning processes that have improved uniformity and are less susceptible to breakage.


REFERENCES:
patent: 5508539 (1996-04-01), Gilbert et al.
patent: 5821170 (1998-10-01), Klingbeil, Jr. et al.
patent: 6033995 (2000-03-01), Muller
patent: 6076585 (2000-06-01), Klingbeil, Jr. et al.
patent: 6091111 (2000-07-01), Demirlioglu et al.
patent: 6372356 (2002-04-01), Thornton et al.
patent: 6399997 (2002-06-01), Lin et al.
patent: 6426248 (2002-07-01), Francis et al.
patent: 6462360 (2002-10-01), Higgins et al.
patent: 6534382 (2003-03-01), Sakaguchi et al.
patent: 6558973 (2003-05-01), Johnson et al.
patent: 6563118 (2003-05-01), Ooms et al.
patent: 6583455 (2003-06-01), Micovic et al.
patent: 6594414 (2003-07-01), Tungare et al.

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