Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-06-25
2000-10-03
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438627, 438637, 438692, 438703, 438785, H91L 214763
Patent
active
061272582
ABSTRACT:
In accordance with embodiments of the present invention a trench-level dielectric film (26) and a via-level dielectric film (24) are formed overlying a semiconductor device substrate (10). A via opening (42) is etched in the trench-level dielectric film with a first etch chemistry that has a higher etch selectivity to the trench-level dielectric film (26) than to the via-level dielectric film (24). A trench opening (54) is patterned in a photoresist layer (52) overlying the trench-level dielectric film (26). The via-level dielectric film (24) is etched with a second etch chemistry to extend the via opening (42) into the via-level dielectric film (24). The trench-level dielectric film (26) is etched to form a trench opening.
REFERENCES:
patent: 5269880 (1993-12-01), Jolly et al.
patent: 5635423 (1997-06-01), Huang et al.
patent: 5741626 (1998-04-01), Jain et al.
patent: 5783485 (1998-07-01), Ong et al.
patent: 5877075 (1999-03-01), Dai et al.
patent: 5877076 (1999-03-01), Dai et al.
patent: 5882996 (1999-03-01), Dai
patent: 5897375 (1999-04-01), Watts et al.
patent: 5920790 (1999-07-01), Wetzel et al.
patent: 5926732 (1999-07-01), Matsuura
patent: 5939334 (1999-08-01), Nguyen et al.
patent: 5939788 (1999-08-01), McTeer
patent: 5960270 (1999-09-01), Misra et al.
patent: 5989997 (1999-11-01), Lin et al.
patent: 6001730 (1999-12-01), Farkas et al.
patent: 6016000 (2000-01-01), Moslehi
Cave Nigel Graeme
Herrick Matthew Thomas
Sparks Terry Grant
Watanabe Joy Kimi
Duong Khanh
Jr. Carl Whitehead
Motorola Inc.
Rodriguez Robert A.
LandOfFree
Method for forming a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-194886