Method for forming a self-aligned twin well region with...

Details Method for forming a self-aligned twin well region with... Method for forming a self-aligned twin well region with...

2006-03-07

2009-06-02

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

C438S322000, C438S327000, C438S370000, C438S373000, C438S375000, C257SE21461, C257SE21476, C257SE21612, C257SE29345, C257SE33005, C257SE33012, C257SE33019, C257SE33063

Reexamination Certificate

active

07541250

ABSTRACT:
A method for forming a self-aligned twin well region is provided. The method includes implanting a first well type doping species into the DHL such that its distribution remains stopped in the DHL above the silicon substrate, etching away a portion of the DHL using a photoresist mask, implanting a second well type doping species into the portions of the silicon substrate exposed by the etching, and moving a portion of the first well type doping species into the silicon substrate.

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Karl Wimmer, Dissertation: Two-Dimensional Nonplanar Process Simulation (Chapter 2.5.2 Knock-in Implantation—A Feasibility Study for the Production of Ultra Shallow Profiles), Oct. 19, 1994.

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