Method for forming a resist pattern

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430323, 430324, 430314, 156643, 1566591, G03F 736

Patent

active

052780295

ABSTRACT:
A method for forming a resist pattern comprising applying onto a base plate a resinous composition comprising a compound capable of generating an acid when irradiated with actinic rays to obtain a photosensitive layer, exposing the thus formed layer through a pattern mask to actinic rays, applying onto the whole surface of the layer an alkoxysilane gas and subjecting the thus treated layer to dry etching to remove unexposed area of said layer. By the adoption of the present method, a very fine resist pattern which is useful for the preparation of semiconductor element, magnetic bubble memory element and the like, can be easily and economically prepared.

REFERENCES:
patent: 4552833 (1985-11-01), Ito et al.
patent: 4751170 (1988-06-01), Mimura et al.
patent: 4782008 (1988-11-01), Babich et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for forming a resist pattern does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a resist pattern, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a resist pattern will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1630414

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.