Method for forming a resist pattern

Details Method for forming a resist pattern Method for forming a resist pattern

1997-07-03

1999-11-09

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430395, 430494, G03F 720

Patent

active

059811501

ABSTRACT:
The present invention provides a method for forming a resist pattern which allows a closest pattern to be formed thus solving a problem of misalignment. A substrate has, on the surface thereof, first and second domains having different reflectivity to first light. A resist covers the first and second domains. The first light illuminates the resist and reflects from the surfaces of the first and second domains. A resist pattern forms in the fashion of self-alignment based on the illuminated and reflected light. The sum of the exposure of the illuminated and reflected light is set above a threshold of exposure by which the resist is sensitized in the first domain and set below the threshold of exposure in the second domain.

REFERENCES:
patent: 4379833 (1983-04-01), Canavello
patent: 4921774 (1990-05-01), Higashiyama

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