Method for forming a protective buffer layer for high...

Details Method for forming a protective buffer layer for high... Method for forming a protective buffer layer for high...

2005-05-17

2005-05-17

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S763000

Reexamination Certificate

active

06893920

ABSTRACT:
A thin buffer layer of SiON is formed on the top surface of the floating gate, in order to protect the polysilicon surface from attack by atomic chlorine produced during the formation of the high temperature oxide of the ONO stack. The buffer layer can also be formed on other dielectric surfaces which are otherwise subject to adverse conditions in subsequent processing, such as the nitride layer in the ONO dielectric stack.

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