Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-10-31
2009-08-18
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S154000, C438S938000, C257S331000, C257S365000, C257S369000, C257S347000, C257S204000, C257S285000, C257S351000, C257S401000
Reexamination Certificate
active
07575975
ABSTRACT:
Forming a semiconductor structure includes providing a substrate having a strained semiconductor layer overlying an insulating layer, providing a first device region for forming a first plurality of devices having a first conductivity type, providing a second device region for forming a second plurality of devices having a second conductivity type, and thickening the strained semiconductor layer in the second device region so that the strained semiconductor layer in the second device region has less strain that the strained semiconductor layer in the first device region. Alternatively, forming a semiconductor structure includes providing a first region having a first conductivity type, forming an insulating layer overlying at least an active area of the first region, anisotropically etching the insulating layer, and after anisotropically etching the insulating layer, deposing a gate electrode material overlying at least a portion of the insulating layer.
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Chen Jian
Nguyen Bich-Yen
Sadaka Mariam G.
Thean Voon-Yew
Zhang Da
Chiu Joanna G.
Freescale Semiconductor Inc.
Khosraviani Arman
King Robert L.
Vu David
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