Method for forming a pixel of an electroluminescence device...

Details Method for forming a pixel of an electroluminescence device... Method for forming a pixel of an electroluminescence device...

2011-03-29

2011-03-29

Mai, Anh D (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S155000, C257SE21411

Reexamination Certificate

active

07915117

ABSTRACT:
An electroluminescence (EL) device includes a substrate and a plurality of pixels formed on the substrate. Each pixel includes a first area including at least a first capacitor and a second capacitor, the first capacitor including a first conductive layer, a first dielectric layer over the first conductive layer, and a second conductive layer over the first dielectric layer, and the second capacitor including the second conductive layer, a second dielectric layer over the second conductive layer, and a third conductive layer over the second dielectric layer, and a second area including a first semiconductor layer formed on the substrate, a first gate oxide layer over the first semiconductor layer, and a fourth conductive layer over the first gate oxide layer.

REFERENCES:
patent: 5459596 (1995-10-01), Ueda et al.
patent: 6610997 (2003-08-01), Murade
patent: 2002/0104995 (2002-08-01), Yamazaki et al.
patent: 2003/0127652 (2003-07-01), Park et al.

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