Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-03-19
2010-10-12
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S257000, C438S393000, C438S394000
Reexamination Certificate
active
07811885
ABSTRACT:
A phase change device may be formed by forming a phase change material and an electrode in a pore in an insulator. The phase change material fills less of the pore than the electrode.
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patent: 6670628 (2003-12-01), Lee et al.
patent: 6764894 (2004-07-01), Lowrey
patent: 6818481 (2004-11-01), Moore et al.
patent: 7314776 (2008-01-01), Johnson et al.
patent: 2003/0035315 (2003-02-01), Kozicki
Le Dung A.
Ovonyx Inc.
Trop Pruner & Hu P.C.
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