Method for forming a phase change device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S257000, C438S393000, C438S394000

Reexamination Certificate

active

07811885

ABSTRACT:
A phase change device may be formed by forming a phase change material and an electrode in a pore in an insulator. The phase change material fills less of the pore than the electrode.

REFERENCES:
patent: 5789277 (1998-08-01), Zahorik et al.
patent: 6670628 (2003-12-01), Lee et al.
patent: 6764894 (2004-07-01), Lowrey
patent: 6818481 (2004-11-01), Moore et al.
patent: 7314776 (2008-01-01), Johnson et al.
patent: 2003/0035315 (2003-02-01), Kozicki

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