Method for forming a patterned resist

Details Method for forming a patterned resist Method for forming a patterned resist

1992-05-13

1994-06-21

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430325, 430326, 156628, 156643, 1566591, G03C 500

Patent

active

053227646

ABSTRACT:
After a resist layer is formed on a substrate, a predetermined region of resist layer is exposed. A silylated layer is formed in the exposed region of resist layer. After the silylation, a part but not all of the unexposed portion of the resist layer is etched to expose a nonsilylated side portion of the exposed region. The non-silylated side portion of the exposed region uncovered by etching is then silylated. The remainder of the unexposed region is removed, so that a resist pattern is finally obtained. According to the method, a fine resist pattern can be formed without side etch.

REFERENCES:
patent: 4613398 (1986-09-01), Chiong
patent: 4908298 (1990-03-01), Hefferon
Coopmans et al., "Desire: A New Route to Submicron Optical Lithography", Solid State Technology, Jun. 1987, pp. 93-99.
"Desire: A Novel Dry Developed Resist System", Proceeding of SPIE 631,34, Fedor Coopmans, et al., 1986.

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