Method for forming a notched gate oxide asymmetric MOS device

Details Method for forming a notched gate oxide asymmetric MOS device Method for forming a notched gate oxide asymmetric MOS device

1997-06-27

2000-08-29

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438981, H01L 21336

Patent

active

061107832

ABSTRACT:
A method for making an asymmetric MOS device having a notched gate oxide wherein a region of the gate oxide adjacent to either the source or drain is thinner than the remainder of the gate oxide. The resulting MOS device includes a channel under the notched region of the gate oxide with a relatively high concentration of mobile charge carriers.

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