Method for forming a notched gate

Details Method for forming a notched gate Method for forming a notched gate

2006-07-18

2006-07-18

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S183000, C438S585000

Reexamination Certificate

active

07078284

ABSTRACT:
Methods for forming notched gates and semiconductor devices utilizing the notched gates are provided. The methods utilize the formation of a dummy gate on a substrate. The dummy gate is etched to form notches in the dummy gate, and sidewall spacers are formed on the sidewalls of the notched dummy gate. The dummy gate is removed, and a notched gate is formed. The methods allow the height and depth of the notches to be independently controlled, and transistors having shorter channel lengths are formed.

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