Method for forming a non-planar structure on the surface of a se

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

156662, 437 62, 437228, H01L 21306, H01L 2195

Patent

active

048635626

ABSTRACT:
A method for increasing the width of a transistor includes first forming a nitride cap (14) over the substrate (10) and then forming trenches (24) and (26) on either side of the cap (14) and having tapered sidewalls (28) and (30). A conformal layer of nitride (32) is formed over the substrate and then anisotropically etched to form sidewall layers (34) and (36). Field oxide is grown in the trenches with birds beaks (42) and (44) extending upward under the sidewall layers (34) and (36). A portion of the sidewalls (28) and (30) of the trenches remain such that the overall surface area between the edges of the birds beaks (42) and (44) is increased. A layer of strip oxide is then grown on the substrate to provide rounded edges (47) and (49). The strip oxide is then removed by a fifty percent over etch to cause the birds beaks (42) and (44) to recede, thus further increasing the surface area. The gate electrode of a transistor (54) can then be disposed thereacross, thus increasing the width of the transistor for a given silicon surface area in the initial material.

REFERENCES:
patent: 4272308 (1981-06-01), Varshney
patent: 4292156 (1981-09-01), Matsumoto et al.
patent: 4583281 (1986-04-01), Ghezzo et al.
patent: 4692996 (1987-09-01), Minato

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