Method for forming a multi-bit non-volatile memory device

Details Method for forming a multi-bit non-volatile memory device Method for forming a multi-bit non-volatile memory device

2006-06-20

2006-06-20

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S267000

Reexamination Certificate

active

07064030

ABSTRACT:
Forming a non-volatile memory device includes providing a semiconductor substrate, forming a masking layer having a first plurality of openings overlying the semiconductor substrate, forming diffusion regions in the semiconductor substrate at locations determined by the masking layer, forming a dielectric within the first plurality of openings, removing the masking layer to form a second plurality of openings, forming sacrificial spacers along edges of the second plurality of openings and adjacent to the dielectric, forming a separating dielectric to separate the sacrificial spacers within each of the second plurality of openings, forming a sacrificial protection layer overlying the separating dielectric, removing the sacrificial spacers, removing the sacrificial protection layer, forming at least two memory storage regions within each of the second plurality of openings, and forming a common control electrode overlying the at least two memory storage regions. This device may be used, for example, in a VGA memory array.

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