Method for forming a MOSFET with raised source and drain, salici

Details Method for forming a MOSFET with raised source and drain, salici Method for forming a MOSFET with raised source and drain, salici

1999-03-29

2000-12-19

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438297, 438592, H01L 21336

Patent

active

061626910

ABSTRACT:
A method to create raised landing pads for gate electrodes. A layer of polysilicon is deposited over the gate electrode after the gate spacers and the gate isolation areas have been formed. The gate electrode contains two layers, that is a bottom layer of poly and a top layer of oxide or SOG. A layer of photo resist is deposited over the polysilicon, a pattern of landing pads is created in the photo resist. The layer of polysilicon is etched in accordance with the pattern in the photo resist thus forming the elevated landing pads. Source and drain areas of the gate electrode can be contacted by metallic contacts that are in interconnects with these landing pads. The top layer of the gate electrode is removed making the gate electrode a recessed electrode. The invention thereby provides an easy method for removing (by CMP) any bridging that might occur (between the gate electrode and the landing pads) during salicidation.

REFERENCES:
patent: 5496750 (1996-03-01), moslehi
patent: 5668065 (1997-09-01), Lin
patent: 5691212 (1997-11-01), Tsai et al.
patent: 5736419 (1998-04-01), Naem
patent: 5780349 (1998-07-01), Naem
patent: 5804846 (1998-09-01), Fuller
patent: 5827768 (1998-10-01), Lin et al.

Affiliated with

Also associated with

Rating

Method for forming a MOSFET with raised source and drain, salici does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a MOSFET with raised source and drain, salici, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a MOSFET with raised source and drain, salici will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-270681