Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-08-23
2005-08-23
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C430S311000, C430S313000, C438S725000, C438S780000, C438S789000, C438S949000
Reexamination Certificate
active
06933247
ABSTRACT:
A method for forming a minute pattern includes forming a mask layer on an object being patterned. The mask layer is patterned to form a first mask pattern having a first width larger than a predetermined width. The first mask pattern is thermally treated to form a second mask pattern having a second width smaller than the first width. A polymer layer is formed on the second mask pattern. The polymer layer reacts with the second mask pattern to form a hardened layer on a boundary surface between the polymer layer and the second mask pattern, thereby forming a third mask pattern having a third width substantially identical to the predetermined width. The limits of the present photolithography equipment are overcome. Also, a semiconductor device having a CD of below about 100 nm is manufactured.
REFERENCES:
patent: 2004/0106067 (2004-06-01), Lin et al.
patent: 0825492 (1998-02-01), None
patent: 10083087 (1998-03-01), None
patent: 01-76552 (2001-08-01), None
Byun Sung-Hwan
Kim Bong-Cheol
Lee Dae-Youp
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
Sarkar Asok Kumar
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