Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-12-25
2007-12-25
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S253000, C438S393000, C257SE27048
Reexamination Certificate
active
11316631
ABSTRACT:
In a method of forming a metal-insulator-metal (MIM) capacitor in a semiconductor device, after forming a capacitor insulation layer on a lower metal layer of the MIM capacitor, an upper electrode is formed by ion implantation into the capacitor insulation layer and silicidation, without a typical reactive ion etching process. Consequently, damage to the capacitor insulation layer can be minimized, and the area of the capacitor need not increase.
REFERENCES:
patent: 5686329 (1997-11-01), Chang et al.
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Tsai H. Jey
LandOfFree
Method for forming a MIM capacitor in a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming a MIM capacitor in a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a MIM capacitor in a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3834625