Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-03-01
2011-03-01
Smith, Matthew S (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S683000, C438S655000, C438S656000, C438S662000, C438S664000
Reexamination Certificate
active
07897513
ABSTRACT:
The present application is directed to a method for forming a metal silicide layer. The method comprises providing a substrate comprising silicon and depositing a metal layer on the substrate. The metal layer is annealed within a first temperature range and for a first dwell time of about 10 milliseconds or less to react at least a portion of the metal with the silicon to form a silicide. An unreacted portion of the metal is removed from the substrate. The silicide is annealed within a second temperature range for a second dwell time of about 10 milliseconds or less.
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Bu Haowen
Deloach Juanita
Ekbote Shashank
Brady III Wade J.
Franz Warren L.
Parker John M
Smith Matthew S
Telecky , Jr. Frederick J.
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