Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-08-14
2007-08-14
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S680000, C257SE21010
Reexamination Certificate
active
10808193
ABSTRACT:
A method for forming a capacitor insulation film includes the step of depositing a monoatomic film made of a metal by supplying a metal source including the metal and no oxygen, and depositing a metal oxide film including the metal by using a CVD technique. The method provides the metal oxide film having higher film properties with a higher throughput.
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Chinese Office Action, dated Mar. 9, 2007 for corresponding Chinese Patent Application 2004100313924.
Koyanagi Kenichi
Sakuma Hiroshi
Elpida Memory Inc.
Everhart Caridad
Katten Muchin & Rosenman LLP
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