Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-31
2006-01-31
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Reexamination Certificate
active
06991984
ABSTRACT:
To increase the gate coupling ratio of a semiconductor device10, discrete elements22, such as nanocrystals, are deposited over a floating gate16. In one embodiment, the discrete elements22are pre-formed in a vapor phase and are attached to the semiconductor device10by electrostatic force. In one embodiment, the discrete elements22are pre-formed in a different chamber than that where they are attached. In another embodiment, the same chamber is used for the entire deposition process. An optional, interfacial layer17may be formed between the floating gate16and the discrete elements22.
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Chindalore Gowrishankar L.
Ingersoll Paul A.
Muralidhar Ramachandran
Chiu Joanna G.
Freescale Semiconductor Inc.
Kebede Brook
Vo Kim-Marie
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