Method for forming a memory device with a recessed gate

Details Method for forming a memory device with a recessed gate Method for forming a memory device with a recessed gate

2008-01-08

2008-01-08

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S589000, C257SE21652

Reexamination Certificate

active

07316952

ABSTRACT:
A method for forming a semiconductor device. A substrate, having a plurality of deep trench capacitors therein, is provided wherein upper portions of the deep trench capacitor devices are revealed. Spacers on sidewalls of the upper portions of the deep trench capacitors are formed to form a predetermined region surrounded by the deep trench capacitor devices. The predetermined region of the substrate is etched using the spacers and the upper portions of the deep trench capacitors serve as a mask to form a recess, and a recessed gate is formed in the recess.

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