Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-29
2005-11-29
Chaudhuri, Olik (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S299000, C438S591000, C438S763000
Reexamination Certificate
active
06969661
ABSTRACT:
A method for forming, in an integrated circuit, a localized region of a material difficult to etch, including the steps of forming a first silicon oxide layer having a thickness smaller than 1 nm on a silicon substrate; depositing, on the first layer, a second layer selectively etchable with respect to the first layer; forming in the second layer an opening according to the pattern of said localized region; selectively growing on the second layer, around the opening, a germanium layer, the material of the second layer being chosen to enable this selective growth, whereby there exists in the germanium an opening conformable with the above opening; depositing the material difficult to etch so that it does not deposit on the germanium; depositing a conductive layer to fill the opening in the germanium; performing a leveling to expose the germanium; and removing the germanium and the first and second layers.
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French Search Report from French Patent Application 02/16800, filed Dec. 27, 2002.
Bensahel Daniel
Halimaoui Aomar
Chaudhuri Olik
Jorgenson Lisa K.
Malsawma Lex H.
Morris James H.
STMicroelectronics S.A.
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