Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2007-11-13
2007-11-13
Hoang, Quoc (Department: 2818)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S459000, C257SE21644
Reexamination Certificate
active
10492329
ABSTRACT:
The following invention provides a method for forming a layered semiconductor structure having a layer of a first semiconductor material on a substrate of at least one second semiconductor material, comprising the steps of: providing said substrate; burying said layer of said first semiconductor material in said substrate, said buried layer having an upper surface and a lower surface and dividing said substrate into an upper part and a lower part; creating a buried damage layer; which at least partly adjoins and/or partly includes said upper surface of said buried layer; and removing said upper part of said substrate and said buried damage layer for exposing said buried layer. The invention also provides a corresponding layered semiconductor structure.
REFERENCES:
patent: 6214107 (2001-04-01), Kitabatake
patent: 6307232 (2001-10-01), Akiyama et al.
patent: WO 01/72104 (2001-10-01), None
K. Volz, et al., “Ion beam induced amorphization and recrystallization of Si/SiC/Si layer systems”, Nuclear Instruments and Methods in Physics Research, vol. 120, 133-138, (1996).
J.K.N. Linder et al., “Controlling the density distribution of SiC nanocrystals for the ion beam synthesis of buried SiC layers in silicon”, Nuclear Instruments and Methods in Physics Research, vol. 147, pp. 249-255, (1999).
J.K.N. Linder et al., “KeV—and MeV-Ion Beam Synthesis of Buried SiC Layers in Silicon”, Materials Research Society Symp. Proc., vol. 354, pp. 171-176 (1995).
Derwent Abstract corresponding To WO 01/72104 [2001-639195 [73]].
Attenberger Wilfried
Lindner Jörg
Stritzker Bernd
Hoang Quoc
Siltronic AG
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