Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-03-21
2006-03-21
Clark, S. V. (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S778000
Reexamination Certificate
active
07015153
ABSTRACT:
A method for forming at least a portion of a semiconductor device includes providing a semiconductor substrate, flowing a first precursor gas over the substrate to form a first metal-containing layer overlying the semiconductor substrate, and after completing said step of flowing the first precursor gas, flowing a first deuterium-containing purging gas over the first metal-containing layer to incorporate deuterium into the first metal-containing layer and to also purge the first precursor gas. The method may further include flowing a second precursor gas over the first metal-containing layer to react with the first metal-containing layer to form a metal compound-containing layer, and flowing a second deuterium-containing purging gas over the metal compound-containing layer to incorporate deuterium into the metal compound-containing layer and to also purge the second precursor gas.
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Adetutu Olubunmi O.
Gilmer David C.
Roan Darrell
Schaeffer James K.
Tobin Philip J.
Chiu Joanna G.
Clark S. V.
Freescale Semiconductor, inc.
Hill Susan C.
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