Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-06-13
2006-06-13
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S308000, C438S514000, C438S537000
Reexamination Certificate
active
07060547
ABSTRACT:
A method for forming a junction region of a semiconductor device is disclosed. The steps of the method include providing a semiconductor substrate. A gate structure is formed on the semiconductor substrate. A dopant is implanted into the semiconductor substrate to form the junction region. An insulator layer is formed on the gate structure and the semiconductor substrate. A carbon-containing plasma treatment is performed to the insulator layer. A spacer is formed on a side-wall of the gate structure and the dopant is implanted into the semiconductor substrate to form a source/drain region next to the junction region. A heat treatment is performed to the semiconductor substrate.
REFERENCES:
patent: 6794693 (2004-09-01), Kakamu et al.
patent: 6798028 (2004-09-01), Horstmann et al.
Chen Yu-Kun
Chien Chin-Cheng
Wang Hsiang-Ying
Yang Neng-Hui
Novacek Christy
Smith Zandra V.
United Microelectronics Corp.
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