Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Patent
1998-10-29
2000-08-08
Dutton, Brian
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
438238, 438524, 438553, 438526, 438515, 438513, 438494, 438498, 438542, 438561, 438578, H01L 2122, H01L 218234, H01L 21425
Patent
active
061001724
ABSTRACT:
The present invention provides a method for forming self-aligned spacers on the horizontal surfaces while removing spacer material from the vertical surfaces. The preferred method uses a resist that can be made insoluble to developer by the use of an implant. By conformally depositing the resist over a substrate having both vertical and horizontal surfaces, implanting the resist, and developing the resist, the resist is removed from the vertical surfaces while remaining on the horizontal surfaces. Thus, a self-aligned spacer is formed on the horizontal surfaces while the spacer material is removed from the vertical surfaces. This horizontal-surface spacer can then be used in further fabrication. The preferred method can be used in many different processes where there is exists a need to differentially process the vertical and horizontal surfaces of a substrate.
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Furukawa Toshiharu
Hakey Mark C.
Holmes Steven J.
Horak David V.
Rabidoux Paul A.
Dutton Brian
International Business Machines - Corporation
Kebede Brook
Shkurko Eugene I.
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