Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1999-05-12
2000-10-31
Wilczewski, Mary
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438296, H01L 21336
Patent
active
061401935
ABSTRACT:
A method for forming high-voltage semiconductor devices that have trench structure, substantially facilitating the integration of the high-voltage devices and the low-voltage devices, is disclosed. The method includes providing a semiconductor substrate, and forming a blocking layer on the substrate. The blocking layer and the substrate are defined and etched to form at least two trenches therein. Next, the substrate is firstly implanted using the blocking layer as a mask to form at least two drift regions. After refilling the trenches by a dielectric layer to form at least two dielectric regions in the substrate, a gate is then formed and patterned to form a gate region on the substrate, wherein the gate region covers the channel region and portions of the dielectric regions. Finally, secondly implanting the substrate is performed to form source/drain region using the gate region and the dielectric regions as a mask.
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Goodwin David
United Microelectronics Corp.
Wilczewski Mary
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