Method for forming a high density dielectric film by...

Details Method for forming a high density dielectric film by... Method for forming a high density dielectric film by...

2008-01-01

2008-01-01

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

Ionized irradiation

C257SE21269, C257SE21563

Reexamination Certificate

active

11186353

ABSTRACT:
A method for forming a high density dielectric film by chemical vapor deposition. The method comprises: (a) a substrate is provided in a processing chamber; (b) a first gas is introduced into the processing chamber with a first pressure and adsorbed on the substrate, wherein the first gas comprises silicon-containing or carbon-containing gas; (c) the first gas is stopped, and the first pressure is lowered to a second pressure; (d) a second gas is introduced into the processing chamber with a third pressure, and forced to react with the first gas absorbed on the substrate and remained in the processing chamber, wherein the second gas comprises oxidizer or reduction agent; (e) the steps (b)˜(d) are repeated until a high density dielectric film is formed on the substrate.

REFERENCES:
patent: 6713873 (2004-03-01), O'Loughlin et al.
patent: 2005/0235905 (2005-10-01), Senzaki et al.

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