Method for forming a gate electrode in a non volatile memory...

Details Method for forming a gate electrode in a non volatile memory... Method for forming a gate electrode in a non volatile memory...

2007-08-21

2007-08-21

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S737000

Reexamination Certificate

active

11010986

ABSTRACT:
Disclosed herein is a method for forming a gate electrode of a non-volatile memory device. In an etch process of a gate electrode for defining the gate electrode, the etch process is performed by selectively adding an addition gas containing carbon. This prevents undercuts from being formed on a sidewall of a control gate when a floating gate is etched. It is thus possible to form the gate electrode having a vertical profile.

REFERENCES:
patent: 2005/0095783 (2005-05-01), Haselden et al.
patent: 1020000043917 (2000-07-01), None
Official Action in Corresponding KR Application No. 2004-0073679 dated Apr. 6, 2006.

Affiliated with

Also associated with

Rating

Method for forming a gate electrode in a non volatile memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a gate electrode in a non volatile memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a gate electrode in a non volatile memory... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3859459