Method for forming a gate dielectric of a semiconductor device

Details Method for forming a gate dielectric of a semiconductor device Method for forming a gate dielectric of a semiconductor device

2006-08-02

2009-06-23

Tsai, H. Jey (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S981000

Reexamination Certificate

active

07550346

ABSTRACT:
Disclosed is a method for forming a gate dielectric in a semiconductor device. The present method includes forming a first dielectric layer on a semiconductor substrate; removing a portion of the first dielectric layer to expose a portion of the substrate; forming a nitride layer on the exposed portion of the substrate and the first dielectric layer; forming a transition metal layer on the nitride layer; and oxidizing the transition metal layer to form a transition metal oxide layer.

REFERENCES:
patent: 2003/0215995 (2003-11-01), Wilk

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