Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-09-18
2000-12-19
Dang, Trung
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438132, 438333, 438601, 257503, 257506, H01L 21336, H01L 2182, H01L 21331, H01L 2144, H01L 2100
Patent
active
061626864
ABSTRACT:
A method of forming a grooved fuse (plug fuse) in the same step that via plugs are formed in the guard ring area 14 and in product device areas. A key point of the invention is to form fuses from the via plug layer, not from the metal layers. Also, key guard rings are formed around the plug guise. The invention can include the following: a semiconductor structure is provided having a fuse area, a guard ring area surrounding the fuse area; and a device area. First and second conductive strips are formed. First and second insulating layers are formed over the first and second conductive strips. Plug contacts and fuse plugs are formed through the first and second insulating layers to the first and second conductive strips. A third insulating layer is formed over the second insulating layer. Metal lines are formed over the third insulating layer in the device area. A fuse via opening is formed in the third insulating layer. A plug fuse is formed in the fuse via opening. A fourth insulating layer is formed over the plug fuse and the third insulating layer. A fuse opening is formed at least partially though the fourth insulating layer over the fuse area.
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Huang Kuo Ching
Lee Yu-Hua
Li Ming-Hsin
Ying Tse-Liang
Ackerman Stephen B.
Dang Trung
Kebede Brook
Saile George O.
Stoffel William J.
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