Method for forming a floating gate using chemical mechanical...

Details Method for forming a floating gate using chemical mechanical... Method for forming a floating gate using chemical mechanical...

2011-08-16

2011-08-16

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C438S211000, C438S258000, C438S259000, C438S261000, C257SE21422, C257SE21680, C257SE21687, C257SE21688

Reexamination Certificate

active

07998809

ABSTRACT:
An improved process forming a floating gate region of a semiconductor memory device. The process includes using a ceria slurry for chemical mechanical planarization to provide “stop on polysilicon” capabilities, allowing a thin nitride layer, or in the alternative no nitride layer, to be used and reducing the number of processing steps required to form the floating gate region.

REFERENCES:
patent: 5767005 (1998-06-01), Doan et al.
patent: 5930645 (1999-07-01), Lyons et al.
patent: 6013551 (2000-01-01), Chen et al.
patent: 6258692 (2001-07-01), Chu et al.
patent: 6337255 (2002-01-01), Bradl et al.
patent: 6399449 (2002-06-01), Matsumoto
patent: 6403486 (2002-06-01), Lou
patent: 6417047 (2002-07-01), Isobe
patent: 6530968 (2003-03-01), Tsuchiya et al.
patent: 6559028 (2003-05-01), Hause et al.
patent: 6649965 (2003-11-01), Takada et al.
patent: 6743676 (2004-06-01), Park et al.
patent: 6787471 (2004-09-01), Kobayashi
patent: 6838342 (2005-01-01), Ding
patent: 6864150 (2005-03-01), Lin et al.
patent: 6872632 (2005-03-01), Ibara
patent: 6943075 (2005-09-01), Joo
patent: 6949792 (2005-09-01), Hurley et al.
patent: 7056804 (2006-06-01), Lyons et al.
patent: 7098116 (2006-08-01), Lu et al.
patent: 7122427 (2006-10-01), Jung et al.
patent: 7148117 (2006-12-01), Seo
patent: 7186627 (2007-03-01), Jin
patent: 7223994 (2007-05-01), Chidambarrao et al.
patent: 7531415 (2009-05-01), Kwok
patent: 2001/0002055 (2001-05-01), Clampitt et al.
patent: 2002/0042180 (2002-04-01), Tuan et al.
patent: 2003/0119257 (2003-06-01), Dong et al.
patent: 2003/0124800 (2003-07-01), Park et al.
patent: 2003/0129839 (2003-07-01), Lee et al.
patent: 2003/0139051 (2003-07-01), Andideh et al.
patent: 2003/0199149 (2003-10-01), Lee et al.
patent: 2003/0232494 (2003-12-01), Adams et al.
patent: 2004/0097046 (2004-05-01), Maruyama et al.
patent: 2004/0097080 (2004-05-01), Kim et al.
patent: 2004/0157406 (2004-08-01), Ibara
patent: 2004/0163324 (2004-08-01), Lee et al.
patent: 2004/0203217 (2004-10-01), Lai et al.
patent: 2004/0241949 (2004-12-01), Asakawa
patent: 2005/0106813 (2005-05-01), Lee et al.
patent: 2005/0106822 (2005-05-01), Lee et al.
patent: 2005/0136673 (2005-06-01), Xu et al.
patent: 2005/0142804 (2005-06-01), Shin
patent: 2006/0088965 (2006-04-01), Yang
patent: 2006/0121725 (2006-06-01), Basol et al.
patent: 2006/0211215 (2006-09-01), Yoshida
patent: 2006/0211250 (2006-09-01), Hou et al.
patent: 2006/0216935 (2006-09-01), Oswald et al.
patent: 2007/0026632 (2007-02-01), Yamamoto
patent: 2007/0190715 (2007-08-01), Ohta
patent: 2008/0081411 (2008-04-01), Cho et al.
patent: 2008/0108219 (2008-05-01), Huebinger et al.

Affiliated with

Also associated with

Rating

Method for forming a floating gate using chemical mechanical... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a floating gate using chemical mechanical..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a floating gate using chemical mechanical... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2648695