Method for forming a flash memory by using a...

Details Method for forming a flash memory by using a... Method for forming a flash memory by using a...

2002-07-11

2008-03-11

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S488000

Reexamination Certificate

active

07341910

ABSTRACT:
This invention provides a method for forming a microcrystalline polysilicon layer by using silane or dislane with introducing hydrogen gas. This microcrystalline polysilicon layer can be used as a floating gate of a flash memory to improve the character of the flash memory.

REFERENCES:
patent: 6465308 (2002-10-01), Cheng et al.
patent: 2003/0047734 (2003-03-01), Fu et al.

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