Method for forming a finely patterned resist

Details Method for forming a finely patterned resist Method for forming a finely patterned resist

2005-01-11

2008-09-02

Duda, Kathleen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S325000, C430S330000

Reexamination Certificate

active

07419771

ABSTRACT:
A method for reducing a critical dimension of a photoresist pattern while improving a line spacing between distal end portions of pattern lines wherein the method includes providing a substrate including an overlying resist; exposing the resist to an activating light source; baking the resist in a first baking process followed by developing the resist in a first development process to form a first resist pattern; then baking the first resist pattern in a second baking process followed by developing the first resist pattern in a second development process to form a second resist pattern having reduced dimensions; and, then dry trimming the second resist pattern to form a final resist pattern with reduced dimensions compared to the second resist pattern.

REFERENCES:
patent: 2001/0029107 (2001-10-01), Yamana
patent: 2005/0133827 (2005-06-01), Huang et al.
patent: 2006/0134889 (2006-06-01), Sadra et al.

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