Method for forming a fine pattern on a semiconductor having a st

Details Method for forming a fine pattern on a semiconductor having a st Method for forming a fine pattern on a semiconductor having a st

1990-10-31

1992-07-28

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Processing feature prior to imaging

430322, 430326, 430394, 430396, G03F 720

Patent

active

051340585

ABSTRACT:
A method for forming an accurate pattern on a semiconductor element that has a step. The method includes the steps of coating a photosensitive material on the surface of the semiconductor, pre-exposing to ultraviolet rays the photosensitive material exisiting in the non-step area which is formed on the surface of the semiconductor other than step area, through a first photomask, exposing the entire photosensitive material through a second photomask with a desired pattern to ultraviolet after removing the first photomask, and developing and removing only photosensitive material that is exposed to ultraviolet in the pre-exposing and exposing steps.

REFERENCES:
patent: 4859573 (1989-08-01), Maheras et al.
patent: 4869999 (1989-09-01), Fukuda
patent: 4931380 (1990-06-01), Owens et al.

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