Method for forming a field effect transistor having a high-k...

Details Method for forming a field effect transistor having a high-k... Method for forming a field effect transistor having a high-k...

2006-01-31

2006-01-31

Thai, Luan (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S240000, C438S591000, C438S785000

Reexamination Certificate

active

06991990

ABSTRACT:
According to one exemplary embodiment, a method for forming a field effect transistor over a substrate comprises a step of forming an interfacial oxide layer over a channel region of the substrate, where the interfacial oxide layer has a first thickness. The interfacial oxide layer can prevent a high-k element from diffusing into the channel region. The method further comprises forming an oxygen-attracting layer over the interfacial oxide layer, where the oxygen-attracting layer prevents the first thickness of the interfacial oxide layer from increasing. The oxygen-attracting layer is formed by forming a metal layer over the interfacial oxide layer, where the metal layer combines with oxygen to form a silicate. The oxygen-attracting layer may be zirconium silicate or hafnium silicate, for example. The method further comprises forming a high-k dielectric layer over the oxygen-attracting layer. The method further comprises forming a gate electrode layer over the high-k dielectric layer.

REFERENCES:
patent: 6703277 (2004-03-01), Paton et al.

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