Method for forming a field effect transistor

Details Method for forming a field effect transistor Method for forming a field effect transistor

1996-01-05

1998-11-03

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438303, 438299, 438439, H01L 21336

Patent

active

058307982

ABSTRACT:
A method for forming a field effect transistor on a substrate includes providing a wordline on the substrate; providing composite masking spacers laterally outward relative to the wordline, the composite masking spacers comprising at least two different materials; removing at least one of the materials of the composite masking spacers to effectively expose the substrate area adjacent to the wordline for conductivity enhancing doping; and subjecting the effectively exposed substrate to conductivity enhancing doping to form source/drain regions. Another aspect of the invention is to provide a method for forming a field effect transistor including providing a gate on the substrate, providing a first layer of nitride over the gate; providing a second layer of a masking material over the first layer of nitride; anisotropically etching the first and second layers to define composite oxidation masking spacers positioned laterally outward relative to the patterned gate; and exposing the substrate to oxidation condition effective to form a field oxide region laterally outward of the composite oxidation masking spacers, the composite oxidation masking spacers effectively restricting oxidation of the substrate therebeneath.

REFERENCES:
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patent: 4916084 (1990-04-01), Shibata et al.
patent: 4966870 (1990-10-01), Barber et al.
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patent: 5229326 (1993-07-01), Dennison et al.
patent: 5328862 (1994-07-01), Goo
patent: 5439839 (1995-08-01), Jang
patent: 5510290 (1996-04-01), Kwon
patent: 5573965 (1996-11-01), Chen et al.

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