Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-29
2010-02-23
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S195000, C438S197000, C438S275000, C438S283000, C257SE21637
Reexamination Certificate
active
07666730
ABSTRACT:
A method for forming a semiconductor structure includes forming a channel region layer over a semiconductor layer where the semiconductor layer includes a first and a second well region, forming a protection layer over the channel region layer, forming a first gate dielectric layer over the first well region, forming a first metal gate electrode layer over the first gate dielectric, removing the protection layer, forming a second gate dielectric layer over the channel region layer, forming a second metal gate electrode layer over the second gate dielectric layer, and forming a first gate stack including a portion of each of the first gate dielectric layer and the first metal gate electrode layer over the first well region and forming a second gate stack including a portion of each of the second gate dielectric layer and the second metal gate electrode layer over the channel region layer.
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Capasso Cristiano
Karve Gauri V.
Samavedam Srikanth B.
Schaeffer James K.
Taylor, Jr. William J.
Chiu Joanna G.
Freescale Semiconductor Inc.
Garber Charles D
Roman Angel
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