Method for forming a DRAM cell with a double-crown shaped capaci

Details Method for forming a DRAM cell with a double-crown shaped capaci Method for forming a DRAM cell with a double-crown shaped capaci

1997-10-20

1999-07-27

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438640, H01L 218242

Patent

active

059306220

ABSTRACT:
A method for forming a double-crown shaped capacitor of a dynamic random access memory cell is disclosed. The method includes forming a first doped polysilicon layer (118) over a semiconductor substrate (110), wherein at least a portion of the first doped polysilicon layer communicates to the substrate. A silicon oxide layer (119) is formed on the first doped polysiliocn layer, followed by removing a portion of the silicon oxide layer. After forming a first silicon nitride spacer (122) on sidewall of the silicon oxide layer, a portion of the first doped polysihocn layer is etched using the first silicon nitride spacer as a mask, thereby forming a recessed cavity (124) in the first doped polysiliocn layer. The recessed cavity and a space surrounded by the first silicon nitride spacer are refilled with a second silicon nitride layer (126). Next, the second silicon oxide layer is removed using the first silicon nitride spacer and the second silicon nitride layer as a mask, and the first doped polysilicon layer is further removed using the first silicon nitride spacer and the second silicon nitride layer as an etch mask. After forming a second doped polysilicon spacer (128) on sidewalls of the first silicon nitride spacer and the first doped polysilicon layer, the second silicon nitride layer and the first silicon nitride spacer are removed. Finally, a dielectric layer (136) is formed on the first doped polysilicon layer and the second doped polysiliocn spacer, and a conductive layer (138) is then formed on the dielectric layer.

REFERENCES:
patent: 5275972 (1994-01-01), Ogawa et al.
patent: 5508223 (1996-04-01), Tseng
patent: 5550076 (1996-08-01), Chen
patent: 5693554 (1997-12-01), Lee
patent: 5733808 (1998-03-01), Tseng

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