Method for forming a DRAM capacitor

Details Method for forming a DRAM capacitor Method for forming a DRAM capacitor

1998-07-01

2000-06-13

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438398, H01L 218242

Patent

active

06074913&

ABSTRACT:
A method for manufacturing a metal-insulator-metal capacitor on a substrate is disclosed. The method comprises the steps of: forming a first dielectric layer onto said substrate; patterning and etching said first dielectric layer to form a contact opening; forming a first metal layer onto said first dielectric layer and into said contact opening; forming a barrier layer onto said first metal layer; forming a second dielectric layer onto said barrier layer; forming a discrete HSG layer onto said second dielectric layer; etching said second dielectric layer by using said HSG layer as a mask; stripping said HSG layer; etching said barrier layer and said first metal layer by using a remaining portion of said second dielectric layer as a mask; stripping said remaining portion of said second dielectric layer; patterning and etching a remaining portion of said barrier layer and a remaining portion of said first metal layer; forming a third dielectric layer over said barrier layer, said first metal layer and said first dielectric layer; and forming a second metal layer over said third dielectric layer.

REFERENCES:
patent: 5142639 (1992-08-01), Kohyama et al.
patent: 5208726 (1993-05-01), Apel
patent: 5268315 (1993-12-01), Prasad et al.
patent: 5351163 (1994-09-01), Dawson et al.
patent: 5406447 (1995-04-01), Miyazaki
patent: 5427974 (1995-06-01), Lur et al.
patent: 5650351 (1997-07-01), Wu
patent: 5960280 (1999-09-01), Jenq et al.
patent: 5966612 (1999-10-01), Wu

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