Method for forming a diode in a surface layer of an SOI substrat

Details Method for forming a diode in a surface layer of an SOI substrat Method for forming a diode in a surface layer of an SOI substrat

1999-12-13

2000-08-15

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438148, 438311, 438328, 257347, H01L 218234

Patent

active

061035645

ABSTRACT:
A diode is formed by forming a PN junction region 6 with a p region 5 formed on a buried oxide film 19 side and an n region 7 formed on the surface side in a surface silicon layer 3 which is isolated by the buried oxide film 19 of an SOI substrate 1, providing a lightly doped p region 33 on one end side of the PN junction region 6 and a lightly doped n region 31 on an other end side, forming a heavily doped p region 13 and a heavily doped n region 9 at the respective surface portions of the lightly doped p region 33 and the lightly doped n region 31 in such a manner as not to contact the PN junction region 6, and providing two metal plates which respectively connect to the heavily doped p region 13 and the heavily doped n region 9.

REFERENCES:
S. Merchant, et al. "Realization of high breakdown voltage (>700) is SOI devices" IEEE International Symposium on Power Semiconductor device s and Integrated circuits, Apr. 22-24, 1991, pp. 31-35.

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