Method for forming a dielectric layer and related devices

Details Method for forming a dielectric layer and related devices Method for forming a dielectric layer and related devices

2006-09-05

2006-09-05

Quach, T. N. (Department: 2826)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S775000, C438S785000, C438S786000, C438S791000

Reexamination Certificate

active

07101811

ABSTRACT:
A dielectric layer may be formed by depositing the dielectric layer to an intermediate thickness and applying a nitridation process to the dielectric layer of intermediate thickness. The dielectric layer may then be deposited to the final, desired thickness.

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