Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-29
2008-12-02
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S581000, C257S412000
Reexamination Certificate
active
07459756
ABSTRACT:
Provided is a semiconductor device and a method for its fabrication. The device includes a semiconductor substrate, a first silicide in a first region of the substrate, and a second silicide in a second region of the substrate. The first silicide may differ from the second silicide. The first silicide and the second silicide may be an alloy silicide.
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Hu Chenming
Lee Wen-Chin
Lin Chuan-Yi
Lin Chun-Chieh
Yeo Yee-Chia
Haynes and Boone LLP
Le Thao P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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