Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-19
2007-06-19
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S246000, C438S249000, C257S301000, C257SE29346
Reexamination Certificate
active
10605234
ABSTRACT:
A method for forming a deep trench capacitor buried plate. A substrate having a pad oxide and a pad nitride is provided. A deep trench is formed in the substrate. A doped silicate film is deposited on a sidewall of the deep trench. A sacrificial layer is deposited in the deep trench, and etched back to expose parts of the doped silicate film. Then, an etching process is performed to remove the exposed doped silicate film and parts of the pad oxide for forming a recess. The sacrificial layer is removed. A silicon nitride layer is deposited to fill the recess and to cover the doped silicate film. Finally, a thermal oxidation process is performed to form a doped ion region. The silicon nitride layer is removed. The doped silicate film is removed.
REFERENCES:
patent: 5482883 (1996-01-01), Rajeevakumar
patent: 6034390 (2000-03-01), Tews
patent: 6310375 (2001-10-01), Schrems
patent: 6316310 (2001-11-01), Wensley et al.
patent: 6362040 (2002-03-01), Tews et al.
patent: 6486024 (2002-11-01), Tews et al.
patent: 6544856 (2003-04-01), Morhard et al.
patent: 6605838 (2003-08-01), Mandelman et al.
patent: 6638815 (2003-10-01), Bronner et al.
patent: 6667503 (2003-12-01), Koike et al.
patent: 6723611 (2004-04-01), Akatsu et al.
patent: 6821844 (2004-11-01), Hsu
patent: 6861312 (2005-03-01), Birner et al.
patent: 6872621 (2005-03-01), Wu
patent: 6929998 (2005-08-01), Chen et al.
patent: 6987042 (2006-01-01), Beintner et al.
patent: 7122439 (2006-10-01), Kwon et al.
patent: 2002/0016035 (2002-02-01), Wu et al.
patent: 2002/0064913 (2002-05-01), Adkisson et al.
patent: 2002/0089007 (2002-07-01), Divakaruni et al.
patent: 2002/0090780 (2002-07-01), Divakaruni et al.
patent: 2003/0045068 (2003-03-01), Gutsche et al.
patent: 2004/0016951 (2004-01-01), Mizushima
patent: 2004/0048441 (2004-03-01), Akatsu et al.
patent: 2004/0219747 (2004-11-01), Lin et al.
patent: 2005/0009268 (2005-01-01), Cheng et al.
patent: 2005/0059207 (2005-03-01), Chang et al.
patent: 2005/0181557 (2005-08-01), Jakschik et al.
Chang Chih-Han
Ho Hsin-Jung
Sun Chien-Jung
Wu Chang-Rong
Kebede Brook
Nanya Technology Corp.
Nguyen Khiem
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