Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1995-11-28
1999-08-17
Brown, Peter Toby
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438397, H01L 218242
Patent
active
059407026
ABSTRACT:
In a method for forming a capacitor in a semiconductor device, an insulating film is formed on a semiconductor substrate, and an opening is formed through the insulating film. Then, a conductive film is formed to cover a side wall surface of the opening and an upper surface of the insulating film, and a whole surface is mechanically ground so as to selectively remove the conductive film on the upper surface of the insulating film so that the conductive film remains only in an inside of the opening. The remaining insulating film is removed so that a cylindrical electrode is formed of an upstanding remaining conductive film having the same height as the thickness of the removed insulating film.
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patent: 5866453 (1999-02-01), Prall et al.
"Novel Stacked Capacitor Cell for 64mb DRAM," W. Wakamiya et al., 1989 Symposium on VLSI Technology Digest of Technical Papers, pp. 69-70.
Brown Peter Toby
NEC Corporation
Thomas Toniae M.
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