Method for forming a contact opening in a semiconductor device

Details Method for forming a contact opening in a semiconductor device Method for forming a contact opening in a semiconductor device

2007-04-10

2007-04-10

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S706000, C438S672000

Reexamination Certificate

active

09752685

ABSTRACT:
A method of forming a self-aligned contact opening in an insulative layer formed over a substrate in a semiconductor device involves etching the insulative layer with at least one fluorocarbon and ammonia.

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