Method for forming a conductive structure having a composite or

Details Method for forming a conductive structure having a composite or Method for forming a conductive structure having a composite or

1997-10-20

2000-10-24

Fahmy, Wael

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 438644, 438648, 438687, 20419215, H01L 214763

Patent

active

06136682&

ABSTRACT:
A
A method for forming an improved copper barrier layer begins by providing a silicon-containing layer (10). A physical vapor deposition process is then used to form a thin tantalum nitride amorphous layer (12). A thin amorphous titanium nitride layer (14) is then deposited over the amorphous tantalum nitride layer. A collective thickness of the tantalum nitride and titanium nitride layers 12 and 14 is roughly 400 angstroms or less. A copper material 16 is then deposited on top of the amorphous titanium nitride wherein the composite tantalum nitride layer 12 and titanium nitride layer 14 effectively prevents copper from diffusion from the layer 16 to the layer 10.

REFERENCES:
patent: 5302537 (1994-04-01), Strack
patent: 5391517 (1995-02-01), Gelatos et al.
patent: 5414301 (1995-05-01), Thomas
patent: 5447908 (1995-09-01), Itozaki et al.
patent: 5545925 (1996-08-01), Hanaoka
patent: 5585300 (1996-12-01), Summerfelt
patent: 5622305 (1997-04-01), Bacon et al.
patent: 5668411 (1997-09-01), Hong et al.
patent: 5714418 (1998-02-01), Bai et al.
patent: 5739579 (1998-04-01), Chiang et al.
patent: 5744394 (1998-04-01), Iguchi et al.
patent: 5756390 (1998-05-01), Juengling et al.
patent: 5760480 (1995-09-01), You et al.
patent: 5849367 (1998-12-01), Dixit et al.
patent: 5851367 (1998-12-01), Nguyen et al.
patent: 5956612 (1999-09-01), Elliott et al.
J.M. Steigerwald, et al., "Surface Layer Formation During The Chemical Mechanical Polishing Of Copper Thin Films", Mat. Res. Soc. Symp. Proc. vol. 337, 1994 Materials Research Society, pp. 133-138.

Affiliated with

Also associated with

Rating

Method for forming a conductive structure having a composite or does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a conductive structure having a composite or , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a conductive structure having a composite or will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1963229