Method for forming a conductive structure having a composite or

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438643, 438644, 438648, 438687, 20419215, H01L 214763

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06136682&

ABSTRACT:
A
A method for forming an improved copper barrier layer begins by providing a silicon-containing layer (10). A physical vapor deposition process is then used to form a thin tantalum nitride amorphous layer (12). A thin amorphous titanium nitride layer (14) is then deposited over the amorphous tantalum nitride layer. A collective thickness of the tantalum nitride and titanium nitride layers 12 and 14 is roughly 400 angstroms or less. A copper material 16 is then deposited on top of the amorphous titanium nitride wherein the composite tantalum nitride layer 12 and titanium nitride layer 14 effectively prevents copper from diffusion from the layer 16 to the layer 10.

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