Method for forming a capacitor structure

Details Method for forming a capacitor structure Method for forming a capacitor structure

2006-06-29

2009-11-10

Jackson, Jr., Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S309000, C257SE21648, C257SE21019

Reexamination Certificate

active

07615444

ABSTRACT:
A method for forming a capacitor structure, according to which the following consecutive steps are executed: providing a substrate having on its surface contact pads and a dielectric mold provided with at least one trench leaving exposed the contact pads; forming a first conductive layer on side walls of the trench in a top region of the trench the conductive layer being without contact to the contact pads; depositing a first dielectric layer; depositing a second conductive layer on the contact pad and on the side walls of the trench; depositing a second dielectric layer; depositing a third conductive layer; and forming a vertical plug interconnecting the first conductive layer and the third conductive layer.

REFERENCES:
patent: 7344953 (2008-03-01), Hecht et al.
patent: 2004/0077143 (2004-04-01), Lee et al.
patent: 2004/0175884 (2004-09-01), Kang et al.
patent: 2005/0026361 (2005-02-01), Graettinger et al.
patent: 2006/0086962 (2006-04-01), Wu
patent: 2006/0192239 (2006-08-01), Patraw et al.
patent: 2007/0001207 (2007-01-01), Graettinger et al.
German Office Action dated May 23, 2007.

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